Nitrogen-doping effect in a fast-pulled Cz-Si single crystal

Journal of Crystal Growth

Volumn 222, Issue 1-2, 2001, Pages 74-81

  Park, Bong Mo ^a   Seo, Gyeong Ho ^a   Kim, Gun ^a  

^a LG Siltron Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); NITROGEN; OXIDATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); SINGLE CRYSTALS; STACKING FAULTS;

VACANCIES;

SILICON;

EID: 0035147975     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00915-5     Document Type: Article

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