Crystal originated particle induced isolation failure in Czochralski silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 1, 2000, Pages 197-201

  Park, Jea Gun ^a   Lee, Gon Sub ^a   Kwack, Kae Dal ^a   Park, Jung Min ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DYNAMIC RANDOM ACCESS STORAGE; MORPHOLOGY; NITRIDES; OXIDATION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ORIGINATED PARTICLE; ISOLATION FAILURE;

SILICON WAFERS;

EID: 0033891799     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.39.197     Document Type: Article

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