Reduction of grown-in defects by high temperature annealing

Journal of the Electrochemical Society

Volumn 147, Issue 1, 2000, Pages 350-353

  Adachi, N ^a   Hisatomi, T ^a   Sano, M ^a   Tsuya, H ^a  

^a Sumitomo Metal Industries Limited   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; ARGON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; REDUCTION;

CRYSTAL ORIGINATED PARTICLES (COP); GROWN-IN DEFECTS; SELF-INTERSTITIALS;

SILICON WAFERS;

EID: 0033896281     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393199     Document Type: Article

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