Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 4000-4003

  Huth, S ^a   Breitenstein, O ^a   Huber, A ^b   Lambert, U ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347607300     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1310185     Document Type: Article

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