Measurement, modelling and simulation of defects in as-grown Czochralski silicon

Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 353-362

  Vanhellemont, J ^a,e   Senkader, S ^b   Kissinger, G ^c   Higgs, V ^d   Trauwaert, M A ^a   Graf D ^e   Lambert, U ^e   Wagner, P ^e  

^a IMEC   (Belgium)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c IHP   (Germany)

^d Bio Rad Micromeasurements   (United Kingdom)

^e SILTRONIC AG   (Germany)

Author keywords

Critical radius; Cz silicon; Grown in defects; LST; Nucleation; Voids

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DENSITY (SPECIFIC GRAVITY); HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; NUCLEATION; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

LASER SCATTERING TOMOGRAPHY; NONCONTACT CARRIER RECOMBINATION IMAGING;

SEMICONDUCTING SILICON;

EID: 0031244747     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00233-9     Document Type: Article

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