Structural and electrical characterization of oxidated, nitridated and oxi-nitridated (100) GaAs surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4264-4272

  Paul, Narayan Chandra ^a   Nakamura, Kazuki ^a   Takebe, Masahide ^a   Takemoto, Akira ^a   Inokuma, Takao ^a   Iiyama, Koichi ^a   Takamiya, Saburo ^a   Higashimine, Koichi ^b   Ohtsuka, Nobuo ^b   Yonezawa, Yasuto ^c  

^a KANAZAWA UNIVERSITY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

Author keywords

Compound semiconductor; Metal insulator semiconductor; Metal oxide semiconductor; Nitridation; Oxidation

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); OXIDATION; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE-VOLTAGE CHARACTERISTICS; METAL-INSULATOR-SEMICONDUCTOR DIODES; NITROGEN-HELICON WAVE-EXCITED PLASMA PROCESS; OXI-NITRIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18744428336     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4264     Document Type: Article

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