SCOPUS 정보 검색 플랫폼

Vacuum

Volumn 67, Issue 1, 2002, Pages 161-167

Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure

(3) Yang, Jun Kyu a Kang, Min Gu a Park, Hyung Ho a

a Yonsei University (South Korea)

Author keywords

AES; Elemental As; GaAs; Gd2O3; Hydrogenation; XPS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON BEAMS; EVAPORATION; GADOLINIUM COMPOUNDS; HYDROGENATION; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL BONDING;

METALLIC FILMS;

EID: 0037009192 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(02)00187-2 Document Type: Conference Paper

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.