Effect of trimethyl aluminium surface pretreatment on atomic layer deposition Al2O3 ultra-thin film on Si substrate

Chinese Physics Letters

Volumn 22, Issue 9, 2005, Pages 2418-2421

  Xu, Min ^a   Lu, Hong Liang ^a   Ding, Shi Jin ^a   Sun, Liang ^a   Zhang, Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COATINGS; ALUMINUM OXIDE; ATOMS; DIELECTRIC FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON; SUBSTRATES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINIUM SURFACE; ATOMIC-LAYER DEPOSITION; DEPOSITION SYSTEMS; INTERFACIAL LAYER; PRE-TREATMENTS; SI SUBSTRATES; SURFACE PRE-TREATMENTS; TRIMETHYL ALUMINUMS; ULTRA-THIN; ULTRA-THIN FILM;

ATOMIC LAYER DEPOSITION;

EID: 24644438791     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/9/077     Document Type: Article

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