A study of Al/Si3N4/ultrathin Si/GaAs structures by DLTS and C-V measurements

Thin Solid Films

Volumn 433, Issue 1-2 SPEC., 2003, Pages 352-358

  Pincik E ^a   Bartos J ^a   Brunner, R ^a   Ivanco J ^a  

^a INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

GaAs; Quantum well; Si interlayer; Thearetical modelling

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ELECTRON TRAPS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE;

THERMAL ACTIVATION ENERGY;

CAPACITORS;

EID: 0038615930     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00392-4     Document Type: Conference Paper

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