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Volumn 48, Issue 9, 2004, Pages 1549-1553

Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor

Author keywords

Heterojunction bipolar transistor; Metal insulator capacitor; Surface passivation; Surface treatment; X ray photoelectron spectroscopy

Indexed keywords

OHMIC CONTACTS; PASSIVATION; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 2942665959     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.008     Document Type: Conference Paper
Times cited : (15)

References (12)
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  • 3
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  • 5
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  • 8
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    • Hydrogen annealing of transparent gate MOS device
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  • 11
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    • X-ray photoelectron spectroscopy study of GaAs surface exposed to rf hydrogen plasma
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.