Silicon containing polymer in applications for 193 nm high NA lithography processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Bums, Scan ^a   Pfeiffer, Dirk ^a   Mahorowala, Arpan ^a   Petrillo, Karen ^a   Clancy, Alexandra ^a   Babich, Katherina ^a   Medeiros, David ^a   Allen, Scott ^b   Holmes, Steven ^b   Grouse, Michael ^b   Brodsky, Colin ^b   Pham, Victor ^b   Lin, Yi Hsiung ^b   Patel, Kaushal ^b   Lustig, Naftali ^b   Gabor, Allen ^b   Sheraw, Christopher ^b   Brock, Phillip ^c   Larson, Carl ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

193 nm lithography; Contact hole shrink; High etch selectivity; Hyper NA; Reflectivity control; Silicon containing BARC

Indexed keywords

COATINGS; COMPOSITION; IMAGE PROCESSING; LITHOGRAPHY; OPTICAL RESOLVING POWER; PHOTORESISTS; SILICON;

193 NM LITHOGRAPHY; CONTACT HOLE SHRINK; HIGH ETCH SELECTIVITY; HYPER NA; REFLECTIVITY CONTROL; SILICON CONTAINING BARC;

POLYMERS;

EID: 33745591952     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657197     Document Type: Conference Paper

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