Methods to achieve sub-100nm contact hole lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 705-712

  Lindsay, Tracy ^a   Kavanagh, Robert ^a   Pohlers, Gerd ^a   Kanno, Takafumi ^a   Bae, Young ^a   Barclay, George ^a   Kanagasabapathy, Subbareddy ^a   Mattia, Joseph ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

ArF; Bi layer; Contact holes; Thermal flow; Ultra thin resist

Indexed keywords

COMPUTER AIDED SOFTWARE ENGINEERING; ETCHING; IMAGE PROCESSING; MASKS; OPTICAL PROPERTIES; PHOTORESISTS; ULTRATHIN FILMS;

CONTACT HOLE IMAGING; CONTACT HOLE LITHOGRAPHY; FOCUS DRILLING; NUMERICAL APERTURE TOOLS; OFF AXIS ILLUMINATION; PHASE SHIFT MASKS;

PHOTOLITHOGRAPHY;

EID: 0141499849     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485173     Document Type: Conference Paper

References (2)

1. Y. Kamon, H. Momose, H. Kuwano, T. Fujiwara, M. Fujimoto, Newly developed acrylic copolymers for ArF photoresist, Proc. SPIE, 4690, 615, 2002.
2. S. Satyanarayana, C. Cohan, Evaluation of Process Based Resolution Enhancement Techniques to Extend 193nm Lithography, Proc. SPIE, 5039, 2003.