ARC and gap fill material with high etch rate for advanced Dual Damascene process

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue II, 2005, Pages 636-643

  Shinjo, Tetsuya ^a   Takei, Satoshi ^a   Sakaida, Yasushi ^a   Qin, Anwei ^b   Nakajima, Yasuyuki ^a  

^a NISSAN CHEMICAL INDUSTRIES LTD   (Japan)

^b BREWER SCIENCE INC   (United States)

Author keywords

Gap fill material; High etch rate; Iso dense fill bias; Via first Dual Damascene (DD) process

Indexed keywords

COATINGS; ELECTRIC INSULATION; ELECTRIC WIRING; ETCHING; OXYGEN; PERMITTIVITY; POROUS MATERIALS; SURFACE TOPOGRAPHY;

GAP FILL MATERIAL; HIGH ETCH RATE; ISO/DENSE FILL BIAS; VIA FIRST DUAL DAMASCENE (DD) PROCESS;

PHOTORESISTS;

EID: 24644519815     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599249     Document Type: Conference Paper

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