193 Lithography and RELACS™ processing for BEOL lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 2, 2001, Pages 1029-1040

  DellaGuardia, R ^a   Petrillo, K ^a   Chen, J ^a   Rabidoux, P ^a   Dalton, T ^a   Holmes, S ^a   Hadel, L ^a   Malone, K ^a   Mahorowala, A ^a   Greco, S ^a   Ferguson, R ^a  

^a IBM   (United States)

Author keywords

193 nm lithography; Contact hole printing; Image shortening; Lithography; Optical proximity correction; Process window improvement; RELACS; Resolution enhancement

Indexed keywords

ELECTRON BEAMS; ETCHING; MASKS; PHASE SHIFT;

IMAGE SHORTENING;

PHOTORESISTS;

EID: 0011245720     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435636     Document Type: Conference Paper

References (2)

1. T. Wallow, P. Brock, R. DiPietro, R. Allen, J. Opitz, R. Sooriyakumaran, D. Hofer, et al, "Reactive ion etching of 193nm resist candidates: Current platforms, future requirements", SPIE Vol. 333, 92-101, 1998
2. Sales presentation from Clariant entitled "AZ® R200 Coating, (AZ DX 3200SC resist).