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Volumn 86, Issue 19, 2006, Pages 2771-2796
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Transport studies of carbon-rich a-SiCx:H film through admittance and deep-level transient spectroscopy measurements
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
MISFET DEVICES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
THIN FILMS;
TRANSPORT PROPERTIES;
CHARGE INJECTION;
METAL INSULATOR SEMICONDUCTOR (MIS) STRUCTURE;
SILICON SUBSTRATE;
SILICON CARBIDE;
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EID: 33646897080
PISSN: 14786435
EISSN: 14786443
Source Type: Journal
DOI: 10.1080/14786430500377791 Document Type: Article |
Times cited : (9)
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References (82)
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