Effects of surface potential fluctuations on DLTS of MOS structure

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 243-249

  Özder, Serhat ^a   Atilgan, Ißsmaißl ^a   Katirciogßlu, Bayram ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; EFFECTS; FERMI LEVEL; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; STATISTICS; SUBSTRATES; SURFACES;

ENERGY RESOLVE DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI-DIRAC DISTRIBUTION; FREE HOLE DENSITY; HOLE EMISSION TIME CONSTANT; QUIESCENT VOLTAGE; SHOCKLEY-READ-HALL STATISTICS; SURFACE POTENTIAL FLUCTUATIONS;

MOS DEVICES;

EID: 0030082308     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00122-0     Document Type: Review

References (15)

1. D. V. Lang, J. appl. Phys. 45, 3023 (1974).
2. K. L. Wang and O. Evwaraye, J. appl. Phys. 47, 4574 (1976).
3. M. Schulz and N. M. Johnson, Appl. Phys. Lett. 31, 622 (1977).
4. K. Yamasaki, M. Yoshida and T. Sugano, Japan J. Appl. Phys. 18, 113 (1979).
5. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. Wiley, New York (1982).
6. F. Murray, R. Carin and P. Bogdanski, J. appl. Phys. 60, 3592 (1986).
7. N. M. Johnson, Appl. Phys. Lett. 34, 802 (1979).
8. T. Katsube and K. Kakimoto, J. appl. Phys. 52, 3504 (1981).
9. W. D. Eades and R. M. Swanson, J. appl. Phys. 56, 1744 (1984).
10. W. Schockley and W. T. Read, Phys. Rev. 87, 835 (1952).
11. A. Ricksand and O. Engstrom, J. appl. Phys. 70, 6915 (1991).
12. S. Özder, Ph.D. Thesis, Middle East Technical University, Ankara (1994).
13. R. E. Scraton, Basic Numerical Methods. Edward Arnold Ltd, Bristol (1986).
14. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
15. G. Ferenczi, P. Krispin and M. Somogyi, J. appl. Phys. 54, 3902 (1983).