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Volumn 296, Issue 1-2, 2001, Pages 27-38
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Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CAPACITANCE;
ELECTRIC POTENTIAL;
HYDROGENATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
THERMAL STRESS;
METAL INSULATOR SEMICONDUCTOR STRUCTURES (MIS)_;
AMORPHOUS FILMS;
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EID: 0035575695
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(01)00892-4 Document Type: Article |
Times cited : (7)
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References (41)
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