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Volumn 296, Issue 1-2, 2001, Pages 27-38

Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; ELECTRIC POTENTIAL; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL STRESS;

EID: 0035575695     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)00892-4     Document Type: Article
Times cited : (7)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.