Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films

Journal of Non-Crystalline Solids

Volumn 249, Issue 2-3, 1999, Pages 131-144

  Atilgan, Ismail ^a   Özder, Serhat ^a   Özdemir, Orhan ^a   Katircioglu, Bayram ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STATISTICAL METHODS;

ADMITTANCE ANALYSIS; METAL INSULATOR SEMICONDUCTOR; OMITTED MULTIPLYING FACTOR;

THIN FILMS;

EID: 0033516359     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00334-8     Document Type: Article

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