Electrical measurements and optical emission spectroscopy of silicon-carbon alloys grown by PACVD: Correlation with film microstructure

Chemical Vapor Deposition

Volumn 9, Issue 3, 2003, Pages 130-138

  Thomas, Laurent ^a   Tomasella, Eric ^b   Badie, J Marie ^a   Berjoan, René ^a   Ducarroir, Michel ^a  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Amorphous silicon carbide; Ion assisted PACVD; Microstructural characterizations; Plasma diagnostics; Tetra methylsilane

Indexed keywords

AMORPHOUS SILICON; CARBON; CHEMICAL BONDS; CORROSION PREVENTION; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS;

AMORPHOUS SILICON CARBIDE; ION ASSISTED PACVD; MICROSTRUCTURAL CHARACTERIZATION; TETRAMETHYLSILANE;

SILICON CARBIDE;

EID: 3042688894     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200306233     Document Type: Article

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