Transport in tunneling recombination junctions: A combined computer simulation study

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7289-7299

  Vukadinovic M ^a   Smole, F ^a   Topic M ^a   Schropp, R E I ^b   Rubinelli, F A ^c  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

^b UTRECHT UNIVERSITY   (Netherlands)

^c UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHARGE CARRIERS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; SILICON CARBIDE;

FIELD-ENHANCED MOBILITIES; NUMERICAL SIMULATORS; TEMPERATURE DEPENDENCE; TUNNELING RECOMBINATION JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 11144238323     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1811375     Document Type: Article

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