The effect of exciton localization on the optical and electrical properties of undoped and Si-doped AlxGa1-xN

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 744-750

  James, G R ^a   Leitch, A W R ^a   Omnes F ^b   Leroux, M ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; EXCITONS; HALL EFFECT; PHOTOLUMINESCENCE; SILICON; THERMAL EFFECTS;

EXCITON LOCALIZATION ENERGY; TEMPERATURE DEPENDENCE; UNDOPED MATERIALS; VAPOR-PHASE EPITAXY;

ALUMINUM COMPOUNDS;

EID: 33646741587     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/006     Document Type: Article

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