The effect of Si-doping on the variable temperature photoluminescence properties of AlGaN alloys

Physica Status Solidi C: Conferences

Volumn 1, Issue 9, 2004, Pages 2316-2321

  James, G R ^a   Leitch, A W R ^a   Wagener, M C ^a   Omnes F ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM ALLOYS; EXCITONS; HALL EFFECT; IONIZATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUENCHING; SAPPHIRE; SILICON; TEMPERATURE CONTROL;

EPITAXIAL LAYERS; SAPPHIRE SUBSTRATES; SI DONORS; VARIABLE TEMPRATURE PHOTOLUMINESCENCE (PL) MEAUREMENTS;

SEMICONDUCTOR DOPING;

EID: 4444339847     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200404828     Document Type: Conference Paper

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