Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 107-110

  Li, D S ^a   Chen, H ^a   Yu, H B ^a   Zheng, X H ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION;

ELECTRONIC TRANSPORT PROPERTIES; HALL MEASUREMENTS;

GALLIUM NITRIDE;

EID: 1842579963     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.003     Document Type: Article

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