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Volumn 743, Issue , 2002, Pages 381-386
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Evolution of subgrain boundaries in heteroepitaxial GaN/AlN/6H-SiC grown by metalorganic chemical vapor deposition
a a a a a b b |
Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM NITRIDE;
ATOMIC FORCE MICROSCOPY;
CATHODOLUMINESCENCE;
CRYSTAL MICROSTRUCTURE;
EPITAXIAL GROWTH;
GRAIN BOUNDARIES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
OPTICAL MICROSCOPY;
PHOTOLUMINESCENCE;
SILICON CARBIDE;
SUBSTRATES;
BIAXIAL COMPRESSIVE LATTICE MISMATCH STRESS;
OPTICAL NOMARSKI MICROSCOPY;
SECONDARY ELECTRON IMAGING;
SUBGRAIN BOUNDARIES;
GALLIUM NITRIDE;
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EID: 0038033979
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-743-l6.3 Document Type: Conference Paper |
Times cited : (1)
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References (12)
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