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Volumn 743, Issue , 2002, Pages 381-386

Evolution of subgrain boundaries in heteroepitaxial GaN/AlN/6H-SiC grown by metalorganic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SILICON CARBIDE; SUBSTRATES;

EID: 0038033979     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l6.3     Document Type: Conference Paper
Times cited : (1)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.