Electrical signature of the defect associated with gate oxide breakdown

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 393-395

  Zhang, W D ^a   Zhang, J F ^a   Zhao, C Z ^a   Chang, M H ^a   Groeseneken, G ^b   Degraeve, R ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

Breakdown; Defects; Degradation; Electron traps; Gate oxides; Hole traps; Instability; MOS devices; Reliability

Indexed keywords

DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; ELECTRON MOBILITY; ELECTRON TRAPS; GATES (TRANSISTOR); HOLE MOBILITY; HOLE TRAPS; MOS DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; STABILITY;

ELECTRICAL SIGNATURE; GATE OXIDES; HIGH-FIELD ELECTRON TRAPS; LOW-FIELD ELECTRON TRAPS; OXIDE BREAKDOWN;

SEMICONDUCTOR DEVICE TESTING;

EID: 33646238231     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873384     Document Type: Article

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