Effects of detrapping on electron traps generated in gate oxides

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 174-182

  Zhang, W D ^a   Zhang, J F ^a   Lalor, M J ^a   Burton, D R ^a   Groeseneken, G ^b   Degraeve, R ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE BIAS;

ELECTRON TRAPS;

EID: 0037318520     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/320     Document Type: Article

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