Positive temperature coefficient of impact ionization in strained-Si

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1627-1633

  Waldron, Niamh S ^a   Pitera, Arthur J ^a   Lee, Minjoo L ^a   Fitzgerald, Eugene A ^a   del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Impact ionization; Self heating; Stained Si

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; IMPACT IONIZATION; LEAKAGE CURRENTS; MOSFET DEVICES; TEMPERATURE; THERMAL EFFECTS;

SELF HEATING; STRAINED SILICON; TEMPERATURE COEFFICIENT;

SEMICONDUCTING SILICON;

EID: 23944498417     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850620     Document Type: Article

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