A small GSM power amplifier module using Si-LDMOS driver MMIC

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 47, Issue , 2004, Pages

  Shimizu, Toshihiko ^a   Nunogawa, Yasuhiro ^a   Furuya, Tomio ^a   Yamada, Shinji ^a   Yoshida, Isao ^a   Hotta, Masao ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENT; CURRENT SENSING; ERROR AMPLIFIERS; RESISTOR DIVIDER CIRCUITS;

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; POWER CONTROL; SEMICONDUCTING GALLIUM ARSENIDE;

GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS;

EID: 2442642603     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Zhang et al., "An Advanced Power Amplifier Module for Quad-Band Wireless Applications," APMC Proceedings, vol. 3, pp. 1559-1562, 2002.
2. Y. Hoshino et al., "High Performance Scaled Down Si LDMOSFET with TiN Gate Bird's Beak Technology for RF Power Amplifiers," IEDM Technical Digest, pp. 205-208, 1999.
3. I. Yoshida et al., "A 3.6V 4W 0.2cc Si Power MOS Amplifier Module for GSM Handset Phones," ISSCC Dig. Tech. Papers, pp. 50-51, 1998. Renesas Technology, Takasaki, Japan