Ordering of As impurities in a Si dislocation core

Applied Physics Letters

Volumn 70, Issue 3, 1997, Pages 336-338

  Maiti, A ^a   Kaplan, T ^a   Mostoller, M ^a   Chisholm, M F ^a   Pennycook, S J ^a   Pantelides, S T ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000576850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118407     Document Type: Article

References (21)

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21. In the local density approximation used in the calculations, the band gap is smaller than the experimental band gap, so we cannot unambiguously determine the precise location of the level relative to the conduction band edge. Note that, however, for total-energy calculations performed here, only the occupied states are pertinent.