Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1169-1179

  Tada, Munehiro ^a   Tamura, Takao ^b   Ito, Fuminori ^a   Ohtake, Hiroto ^a   Narihiro, Mitsuru ^a   Tagami, Masayoshi ^a   Ueki, Makoto ^a   Hijioka, Ken'ichiro ^a   Abe, Mari ^a   Inoue, Naoya ^a   Takeuchi, Tsuneo ^a   Saito, Shinobu ^a   Onodera, Takahiro ^a   Furutake, Naoya ^a   Arai, Kouichi ^a   Sekine, Makoto ^b   Suzuki, Mieko ^b   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

65 nm node; Cu; Damascene; Interconnects; Porous dielectric (porous low k); Reliability

Indexed keywords

COPPER; DIELECTRIC MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS; RELIABILITY; SILICON COMPOUNDS;

DAMASCENE; POROUS DIELECTRIC; ULTRATHIN PLASMAPOLYMERIZED BENZOCYCLOBUTEN; ULTRATHIN SIDEWALL PROTECTION LINERS;

OPTICAL INTERCONNECTS;

EID: 33646027032     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872095     Document Type: Article

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