Full-0.56μm pitch copper interconnects for a high performance 0.15-μm CMOS logic device

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 615-618

  Iguchi, M ^a   Takewaki, T ^a   Matsubara, Y ^a   Kunimune, Y ^a   Ito, N ^a   Tsuchiya, Y ^a   Matsui, T ^a   Fujii, K ^a   Motoyama, K ^a   Sugai, K ^a   Kubo, A ^a   Suzuki, M ^a   Tachibana, H ^a   Nishizawa, A ^a   Nakabeppu, K ^a   et al , ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COPPER; ELECTROMIGRATION; FAILURE (MECHANICAL); INTEGRATED CIRCUIT MANUFACTURE; OSCILLATORS (ELECTRONIC); PERFORMANCE; RELIABILITY; TEMPERATURE; TITANIUM COMPOUNDS; ULSI CIRCUITS;

COPPER INTERCONNECTS; MULTILEVEL INTERCONNECT SYSTEM; RING OSCILLATOR; WIRING FAILURES;

INTERCONNECTION NETWORKS;

EID: 19244369951     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)