Post patterning meso porosity creation: A potential solution for pore sealing

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 242-244

  Caluwaerts, R ^a   Van Hove, M ^a   Beyer, G ^a   Hoofman, R J O M ^b   Struyf, H ^a   Verheyden, G J A M ^b   Waeterloos, J ^c   Tokei, Zs ^a   Iacopi, F ^a   Carbonell, L ^a   Le, Q T ^a   Das, A ^a   Vos, I ^a   Demuynck, S ^a   Maex, K ^d  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c IMEC for Dow Chemical   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Chemical vapor deposition; Dielectric materials; Etching; Integrated circuit technology; Plasma applications; Plasma materials processing; Plasma temperature; Resins; Silicon carbide; Vitrification

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; INTEGRATED CIRCUIT INTERCONNECTS; PLASMA APPLICATIONS; POROSITY; RESINS; SILICON CARBIDE; SILK; VAPOR DEPOSITION; VITRIFICATION;

CHEMICAL VAPOR DEPOSITED; DIELECTRIC STACK; DOW CHEMICAL COMPANIES; INTEGRATED CIRCUIT TECHNOLOGY; PLASMA MATERIALS-PROCESSING; PLASMA TEMPERATURE; SINGLE DAMASCENE STRUCTURES; TRENCH SIDEWALLS;

DIELECTRIC MATERIALS;

EID: 84944077896     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219765     Document Type: Conference Paper

References (4)

1. ITRS Roadmap, 2002 Update
2. Zs. Tokei et al, Proceedings of the Adv. Metallization Conference 2000, San Diego
3. J.C. Lin et al. Proceedings IITC 2002, San Francisco, p.21
4. J. Waeterloos et al, Proceedings of the Adv. Metallization Conference 2001, Montreal, Canada