Mechanical property control of low-k dielectrics for diminishing chemical mechanical polishing (CMP)-related defects in Cu-damascene interconnects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1807-1812

  Hijioka, Ken Ichiro ^a   Ito, Fuminori ^a   Tagami, Masayoshi ^a   Ohtake, Hiroto ^a   Harada, Yoshimichi ^a   Takeuchi, Tsuneo ^a   Saito, Shinobu ^a   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Adhesion; CMP related defects; Delamination; Interconnect; Low k

Indexed keywords

ADHESION; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; COPPER; DELAMINATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PARAMETER ESTIMATION; PERMITTIVITY; PHOTOLITHOGRAPHY; POROSITY; PROBLEM SOLVING; REFRACTIVE INDEX; X RAY SCATTERING;

CMP-RELATED DEFECTS; CU-DAMASCENE INTERCONNECTS; INTERCONNECT; LOW-K; LOW-K DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 3142607201     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1807     Document Type: Conference Paper

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