Effects of material interfaces in Cu/Low-κ damascene interconnects on their performance and reliability

IEEE Transactions on Electron Devices

Volumn 51, Issue 11, 2004, Pages 1867-1876

  Tada, Munehiro ^a   Ohtake, Hiroto ^a   Kawahara, Jun ^a   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTROMIGRATION; INTERFACES (MATERIALS); PERFORMANCE; RELIABILITY; THERMAL CYCLING;

BARRIER METAL; CAPPING BARRIER DIELECTRICS; DAMASCENE; HARD MASK; HETEROINTERFACES;

CMOS INTEGRATED CIRCUITS;

EID: 8144229689     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.837375     Document Type: Article

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