AFM-tip-induced and current-induced local oxidation of silicon andmetals

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Avouris, Ph ^a   Marte, R ^a   Hertel, T ^a   Sandstrom, R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AMBIENT HUMIDITY; ATOMIC FORCE MICROSCOPES; DEFOCUSING; DIFFERENT PROCESS; ELECTRIC FIELD STRENGTH; HIGH CURRENT DENSITIES; INITIAL OXIDATION; IONIC CURRENT; KINETICS AND MECHANISM; LATERAL RESOLUTION; LOCAL OXIDATION; LOCAL OXIDATION OF SILICONS; NANOELECTRONIC DEVICES; THIN OXIDES; TIP-INDUCED; TUNNELING BARRIER; WATER FILM;

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; IONIZATION OF LIQUIDS; MOISTURE; OXIDATION;

SILICON OXIDES;

EID: 66249133333     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051218     Document Type: Article

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