Comparative studies of Pt and Ir schottky contacts on undoped Al 0.36Ga0.64N

Microelectronics Reliability

Volumn 46, Issue 5-6, 2006, Pages 786-793

  Guhel, Y ^a   Boudart, B ^a   Delos, E ^b   Germain, M ^c   Bougrioua, Z ^d  

^a Université de Caen Normandie   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c IMEC   (Belgium)

^d CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; IRIDIUM; PLATINUM; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; VOLTAGE MEASUREMENT;

ELECTRICAL TRAPS; SCHOTTKY CONTACTS;

OHMIC CONTACTS;

EID: 33645138818     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.08.008     Document Type: Conference Paper

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