Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurements

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 558-563

  Dumont, J ^a   Monroy, E ^b   Munoz E ^b   Caudano, R ^a   Sporken, R ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

A1. Interfaces; B1. Gallium compounds; B1. Metals; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

COMPOSITION EFFECTS; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY CONTACTS;

SEMICONDUCTOR LASERS;

EID: 0035451339     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01282-9     Document Type: Article

References (16)