Heavy ion damage in ultra-thin gate oxide SQI MOSFETs

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 2005, Pages

  Cester, Andrea ^a,b,d   Gerardin, Simone ^a,b,d   Gasperin, Alberto ^b   Paccagnella, Alessandro ^a,b,d   Simoen, Eddy ^c   Claeys, Cor ^a,c   Candelori, Andrea ^d  

^a IEEE

^b UNIVERSITY OF PADOVA   (Italy)

^c IMEC   (Belgium)

^d SEZIONE DI PADOVA   (Italy)

Author keywords

Gate oxide reliability; Ion radiation effects on MOSFETs; Silicon on insulator

Indexed keywords

ELECTRIC MACHINE INSULATION; GATE DIELECTRICS; GATES (TRANSISTOR); HEAVY IONS; IODINE; IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; RADIATION EFFECTS; REDUCTION;

CHARGE BUILD-UP; EUROPEAN; EXPERIMENTAL DATA; FD DEVICES; GATE OXIDES; GATE-LEAKAGE CURRENTS; HEAVY-ION IRRADIATION; IODINE IONS; ION DAMAGE; ION FLUENCE; LINEAR KINK EFFECT (LKE); MOSFETS; PARASITIC TRANSISTORS; REPRODUCIBILITY; SILICON-ON-INSULATORS (SOI) CMOS; ULTRA THIN GATE OXIDES;

IONS;

EID: 48349136611     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RADECS.2005.4365609     Document Type: Conference Paper

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