Short-Channel Radiation Effect in 60 MeV Proton Irradiated 0.13 μm CMOS Transistors

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 II, 2003, Pages 2426-2432

  Simoen, Eddy ^a   Mercha, Abdelkarim ^a   Morata, Alex ^a   Hayama, Kiyoteru ^b   Richardson, Geoffrey ^a   Rafí, Joan Marc ^a   Augendre, Emmanuel ^a   Claeys, Cor ^a,c   Mohammadzadeh, Ali ^d   Ohyama, Hidenori ^b   Romano Rodriguez, Albert ^e  

^a IMEC   (Belgium)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d EUROPEAN SPACE AGENCY   (Netherlands)

^e UNIVERSITY OF BARCELONA   (Spain)

Author keywords

CMOS; Low frequency noise; Proton irradiation; Radiation hardness; Short channel effects

Indexed keywords

ACOUSTIC NOISE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); MOSFET DEVICES; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

LOW FREQUENCY NOISE; RADIATION HARDNESS; SHORT-CHANNEL EFFECTS (SCE);

CMOS INTEGRATED CIRCUITS;

EID: 10744228395     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820612     Document Type: Conference Paper

References (18)

1. C. Claeys and E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Devices, New York: Springer-Verlag, 2002, ch. 6.
2. G. J. Dunn, B. J. Gross, and C. G. Sodini, "Radiation induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs," IEEE Trans. Electron Devices, vol. 39, pp. 677-684, Mar. 1992.
3. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation, " IEEE Trans. Nucl. Sci., vol. 45, pp. 2584-2592, Dec. 1998.
4. G. U. Youk, P. S. Khare, R. D. Schrimpf, L. W. Massengill, and K. F. Galloway, "Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides," IEEE Trans. Nucl. Sci., vol. 46, pp. 1830-1835, Dec. 1999.
5. F. T. Brady, J. D. Maimon, and M. J. Hurt, "A scaleable, radiation hardened shallow trench isolation," IEEE Trans. Nucl. Sci., vol. 46, pp. 1836-1840, Dec. 1999.
6. E. Simoen, J. Hermans, E. Augendre, T. Marescaux, C. Claeys, G. Badenes, and A. Mohammadzadeh, "Evidence for short-channel effect in the radiation response of 0.18 μm CMOS transistors," in Proc. RADECS 2000 Workshop, Louvain-la-Neuve, Belgium, Sept. 11-13, 2000, pp. 25-31.
7. E. Simoen, J. Hermans, A. Mercha, W. Vereecken, C. Vermoere, C. Claeys, E. Augendre, G. Badenes, and A. Mohammadzadeh, "60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFET's," in Proc. RADECS'01, Grenoble, France, Sept. 10-14, 2001.
8. R. Gwoziecki, T. Skotnicki, P. Bouillon, and P. Gentil, "Optimization of Vth roll off in MOSFET's with advanced channel architecture-retro-grade doping and pockets," IEEE Trans. Electron Devices, vol. 46, pp. 1551-1561, July 1999.
9. Y. Taur, D. S. Zicherman, D. R. Lombardi, P. J. Restle, C. H. Hsu, H. I. Hanafi, M. R. Wordeman, B. Davari, and G. G. Shahidi, "A new "shift and ratio" method for MOSFET channel-length extraction," IEEE Electron Device Lett., vol. 13, pp. 267-269, May 1992.
10. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, and G. Ghidini, "Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2375-2382, Dec. 1998.
11. M. Ceschia, A. Paccagnella, S. Sandrin, G. Ghidini, J. Wyss, M. Lavale, and O. Flament, "Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation," IEEE Trans. Nucl. Sci., vol. 47, pp. 566-573, June 2000.
12. A. Mercha, J. Rafi, E. Simoen, and C. Claeys, "60 MeV Proton and Gamma Irradiation Effects on NO and RNO Deep Submicron MOSFET's Fabricated in IMEC's 0.13 μm CMOS Technol.,", P35288-IM-RP-0001, vol. D4, 2002.
13. D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur, "Border traps: Issues for MOS radiation response and long-term reliability," Microelectron. Reliab., vol. 35, pp. 403-428, Mar. 1995.
14. A. S. Grove and D. J. Fitzgerald, "Surface effects on p-n junctions: Characteristics of surface space-charge regions under nonequilibrium conditions," Solid-State Electron., vol. 9, pp. 783-806, 1966.
15. A. Mercha, J. M.Rafí, E. Simoen, E. Augendre, and C. Claeys, "Parasitic conduction in a 0.13 μm CMOS technology," J. Phys. IV, vol. 12, pp. Pr3-61/64, June 2002.
16. W.-C. Lee and C. Hu, "Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling," IEEE Trans Electron Devices, vol. 48, pp. 1366-1373, July 2001.
17. A. Mercha, J. M. Rafi, E. Simoen, and C. Claeys, '"Linear kink effect' induced by valence band electron tunneling in ultra-thin gate oxide bulk and SOI MOSFETs," IEEE Trans. Electron Devices, vol. 50, pp. 1675-1682, July 2003.
18. M. Rasras, I. De Wolf, G. Groeseneken, R. Degraeve, and H. Maes, "Origin of substrate hole current after gate oxide breakdown," J. Appl. Phys., vol. 91, pp. 2155-2160, Feb. 2002.