Substrate Removal and BOX Thinning Effects on Total Dose Response of FDSOI NMOSFET

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1776-1783

  Gouker, P ^a   Burns, J ^a   Wyatt, P ^a   Warner, K ^a   Austin, E ^a   Milanowski, R ^b,c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b DYNAMICS RESEARCH CORPORATION   (United States)

^c TITAN CORPORATION   (United States)

Author keywords

Fully depleted silicon on insulator (FDSOI); Low temperature wafer bonding; Substrate and buried oxide thinning effects; Total dose effects; Total dose tolerance; X ray irradiation

Indexed keywords

FULLY DEPLETED SILICON-ON-INSULATOR (FDSOI); LOW-TEMPERATURE WAFER BONDING; SUBSTRATE AND BURIED OXIDE THINNING EFFECTS; TOTAL DOSE EFFECTS; TOTAL DOSE TOLERANCE; X-RAY IRRADIATION;

DEPOSITION; DOSIMETRY; HOLE TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; OPTIMIZATION; RADIATION EFFECTS; SILICON WAFERS; THIN FILMS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1242287979     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821822     Document Type: Conference Paper

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