Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 248-253

  Ghosh, Bahniman ^a   Chen, Jer Hueih ^a,b,c   Fan, Xiao Feng ^a   Register, Leonard F ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c Submicron Development Center   (United States)

Author keywords

Germanium; Monte Carlo; MOSFET; Remote Coulomb; Remote surface roughness

Indexed keywords

IONIZED IMPURITY; QUANTUM CONFINEMENT; REMOTE COULOMB;

CRYSTAL IMPURITIES; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; GERMANIUM; IONIZATION; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; SURFACE ROUGHNESS;

MOSFET DEVICES;

EID: 32344432431     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.007     Document Type: Article

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