Monte Carlo study of germanium n- and pMOSFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 547-553

  Ghosh, Bahniman ^a   Wang, Xin ^a,b   Fan, Xiao Feng ^a   Register, Leonard F ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Germanium; Monte Carlo (MC); nMOSFET; pMOSFET; Silicon

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; HOLE MOBILITY; IMPACT IONIZATION; MONTE CARLO METHODS; PHONONS; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS;

IONIZED IMPURITY; QUANTUM CONFINEMENT; SURFACE ROUGHNESS SCATTERING;

MOSFET DEVICES;

EID: 17444431195     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.844736     Document Type: Article

References (23)

1. H. Shang, H. Okorn-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Kozlowski, S. E. Steen, S. A. Cordes, H.-S. P. Wong, E. C. Jones, and W. E. Hanesch, "High mobility p-channel Germanium MOSFETs with a thin Ge oxynitride gate dielectric," in IEDM Tech. Dig., 2002, pp. 441-444.
2. C. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "Germanium MOS capacitors incorporating ultrathin high- κ gate dielectric," IEEE Electron Device Lett., vol. 23, no. 8, pp. 473-475, Aug. 2002.
3. x-Si virtual substrates," Appl. Phys. Lett., vol. 79, no. 20, pp. 3344-3346, 2001.
4. M. Lundstrom, "Elementary scattering theory of the Si MOSFET," IEEE Electron Device Lett., vol. 18, no. 7, pp. 361-363, Jul. 1997.
5. A. B. Chen and A. Sher, "Electronic structure of III-V semiconductors and alloys using simple orbitals," Phys. Rev. B, Condens. Matter, vol. 22, p. 3886, 1980.
6. N. H. Phuong, K. R. Hofmann, and G. Paasch, "Comparative fullband Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates," J. Appl. Phys., vol. 94, no. 1, pp. 375-386, Jul. 1, 2003.
7. T. Low et al., "Investigation of performance limits of germanium double gated MOSFETs," in IEDM Tech. Dig., 2003, pp. 29.4.1-29.4.4..
8. A. Rahman, A. Ghosh, and M. Lundstrom, "Assessment of Ge nMOSFETs by quantum simulation," in IEDM Tech. Dig., 2003, pp. 19.4.1.-19.4.4.
9. X.-F. Fan, X. Wang, B. Winstead, L. F. Register, U. Ravaioli, and S. K. Banerjee, "MC simulation of strained-Si MOSFET with full band structure and quantum correction," IEEE Trans. Electron Devices, vol. 51, no. 6, pp. 962-970, Jun. 2004.
10. J. R. Chelikowski and M. L. Cohen, "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blend semiconductors," Phys. Rev. B, Condens. Matter, vol. 14, p. 556, 1976.
11. X. Wang, V. Chandramouli, C. M. Maziar, and A. F. Tasch, Jr., "Simulation program suitable for hot carrier studies: An efficient multiband Monte Carlo model using both full band and analytic band structure description for silicon," J. Appl. Phys., vol. 73, no. 7, pp. 3339-3347, Apr. 1, 1993.
12. M. V. Fischetti and S. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," J. Appl. Phys., vol. 80, p. 2234, 1996.
13. x," Solid State Electron., vol. 38, pp. 881-890, 1995.
14. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, p. 47.
15. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, p. 645, 1983.
16. E. Cartier, M. V. Fischetti, E. A. Eklund, and F. R. McFeely, "Impact ionization in silicon," Appl. Phys. Lett., vol. 62, p. 3339, 1993.
17. B. K. Ridley, "Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors," J. Phys. C Solid State Phys., vol. 10, p. 1589, 1977.
18. S. Jallepalli, "Monte Carlo-based analysis of carrier transport in deep submicron silicon MOSFETs," Ph.D. dissertation, Dept. Elect. Comput. Eng., Univ. Texas, Austin, TX, 1996.
19. 2 interface," Phys. Rev. B, Condens. Matter, vol. 32, p. 8171, 1985.
20. H. Shang, H. Okorn-Schmidt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H. S. P. Wong, and W. Hanesch, "Electrical characterization of Germanium p-channel MOSFETs," IEEE Electron Device Letters, vol. 24, no. 4, pp. 242-244, Apr. 2003.
21. Generalized effective mass approach for cubic semiconductor nMOSFETs on arbitrarily oriented wafers, p. 28, to be published.
22. D. Antoniadis, I. Djomehri, K. Jackson, and S. Miller, Well-tempered bulk-Si nMOSFET device, Aug. 1999.
23. R. Granzner, V. M. Polyakov, F. Schwierz, and M. Kittler, "On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs," Phys. E, vol. 19, no. 1-2, pp. 33-38, Jul. 2003.