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Volumn , Issue , 2002, Pages 183-186
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An improved model for electron mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON MOBILITY;
QUANTUM CHEMISTRY;
MOBILITY DEGRADATION;
MOSFETS;
QUANTUM LIMIT;
REMOTE COULOMB SCATTERINGS;
THEORETICAL TREATMENTS;
ULTRA-THIN OXIDE;
MOSFET DEVICES;
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EID: 1542799067
PISSN: 19308876
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2002.194900 Document Type: Conference Paper |
Times cited : (7)
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References (15)
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