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Volumn , Issue , 2002, Pages 183-186

An improved model for electron mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; QUANTUM CHEMISTRY;

EID: 1542799067     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194900     Document Type: Conference Paper
Times cited : (7)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.