Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 463-466

  Lucci, L ^a   Esseni, D ^a   Loo, J ^b   Ponomarev, Y ^b   Selmi, L ^a   Abramo, A ^a   Sangiorgi, E ^c  

^a UNIVERSITY OF UDINE   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; COMPUTER SIMULATION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; ELECTRON MOBILITY; ERROR ANALYSIS; LEAKAGE CURRENTS; POLYSILICON; RELIABILITY; SILICA; SURFACE ROUGHNESS;

GATE LEAKAGE CURRENTS; REMOTE COULOMB SCATTERING (RCS);

MOSFET DEVICES;

EID: 0842288225     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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