A new remote Coulomb scattering model for ultrathin oxide MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 47-50

  Gamiz F ^a   Godoy, A ^a   Roldan J B ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Doping; Electron mobility; Impurities; Monte Carlo methods; MOSFETs; Neodymium; Poisson equations; Scattering; Silicon; Thickness control

Indexed keywords

DOPING (ADDITIVES); ELECTRON MOBILITY; IMPURITIES; INTERFACES (MATERIALS); MONTE CARLO METHODS; NEODYMIUM; POISSON EQUATION; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON; THICKNESS CONTROL;

INTERFACE TRAPPED CHARGES; IONIZED IMPURITIES; MONTE CARLO SIMULATORS; MOSFETS; REMOTE CHARGE SCATTERING; REMOTE COULOMB SCATTERINGS; SCATTERING MECHANISMS; SILICON INVERSION LAYERS;

MOSFET DEVICES;

EID: 32344445043     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233634     Document Type: Conference Paper

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