Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 164-167

  Ono, M ^a   Ishihara, T ^a   Nishiyama, A ^a  

^a Advanced LSI Technology Laboratory Corporate R and D Center Toshiha Corporation   (Japan)

Author keywords

Dielectric constant; Dielectric substrates; Electrodes; Electron mobility; High K dielectric materials; High K gate dielectrics; Impurities; MOSFETs; Partial response channels; Scattering

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; ELECTRON MOBILITY; IMPURITIES; MOSFET DEVICES; PERMITTIVITY; SCATTERING;

DIELECTRIC SUBSTRATES; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; MOSFETS; PARTIAL RESPONSE CHANNEL;

GATE DIELECTRICS;

EID: 32344432489     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159205     Document Type: Conference Paper

References (10)

1. The International Roadmap for Semiconductors 2001.
2. G. D. Wilk et al., J. Appl. Phys. 89, 5243 (2001)
3. T. Yamaguchi et al., IEDM Tech. Dig., 663 (2001)
4. K. Torii et al., Tech. Dig. VLSI Symp., 188 (2002)
5. B. Guillaumot et al., IEDM Tech. Dig., 355 (2002)
6. T. Ishihara et al., J. J. Appl. Phys. 40-1, 2597 (2001)
7. M. Houssa et al., Appl. Phys. Lett. 77, 1885 (2000)
8. G. D. Wilk et al., Tech. Dig. VLSI Symp., 88 (2002)
9. S. Takagi et al., IEEE Trans. ED-41, 2357 (1994)
10. S. Takagi et al., IEEE Trans. ED-46, 1446 (1999)