Comparison of the electrical properties of poly-Si/Hf-silicate gate stacks fabricated by ALD employing BDMAS and TDMAS precursors

Journal of the Electrochemical Society

Volumn 153, Issue 3, 2006, Pages

  Kamiyama, Satoshi ^a,b   Miura, Takayoshi ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); BIS-DIMETHYLAMINO-SILANE; EFFECTIVE OXIDE THICKNESSES (EOT); SI PRECURSORS;

CARBON; DEPOSITION; ELECTROCHEMISTRY; HAFNIUM COMPOUNDS; MOSFET DEVICES; OXIDATION; POLYSILICON; SILANES; SILICON;

GATES (TRANSISTOR);

EID: 32044455065     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2158570     Document Type: Article

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