Electrical properties of poly-Si/ALD Hf-silicate gate stacks with various controlled Hf/(Hf + Si) composition ratios fabricated using Hf[N(CH 3)(C2H5)]4 and SiH[N(CH 3)2]3 precursors

Electrochemical and Solid-State Letters

Volumn 8, Issue 12, 2005, Pages

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC PROPERTIES; HAFNIUM; LEAKAGE CURRENTS; MOSFET DEVICES; SILICATES;

ATOMIC LAYER DEPOSITION (ALD); HF-SILICATE GATE STACKS; LEAKAGE CURRENT DENSITIES;

POLYSILICON;

EID: 28044437520     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2116207     Document Type: Article

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