In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 174-179

  Aoyama, T ^a   Kamiyama, S ^a   Tamura, Y ^a   Sasaki, T ^a   Mitsuhashi, R ^a   Torii, K ^a   Kitajima, H ^a   Arikado, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Annealing; Dielectric substrates; Fabrication; FETs; Fluid flow; Hafnium; Hydrogen; MOCVD; Nitrogen; Temperature

Indexed keywords

ANNEALING; DEPOSITION; FLOW OF FLUIDS; GATE DIELECTRICS; HAFNIUM; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; ORGANIC CHEMICALS; ORGANOMETALLICS; TEMPERATURE; VAPOR DEPOSITION;

BATCH SYSTEMS; DIELECTRIC FABRICATION; DIELECTRIC SUBSTRATES; FABRICATION PROCESS; FETS; HFSION GATE DIELECTRICS; METAL ORGANIC; POST DEPOSITION ANNEALING;

FABRICATION;

EID: 84945132892     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159207     Document Type: Conference Paper

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