Structural and electrical properties of nitrogen-incorporated MOCVD Hf-silicate gate dielectrics treated by plasma nitridation in an Ar/N 2 ambient

Journal of the Electrochemical Society

Volumn 152, Issue 10, 2005, Pages

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a   Arikado, Tsunetoshi ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL; PLASMAS; PRESSURE EFFECTS; SILICATES;

EFFECTIVE MOBILITY CURVES; GATE DIELECTRICS; GATE LEAKAGE CURRENTS; INTERFACIAL OXIDES;

ELECTROCHEMISTRY;

EID: 27644504073     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2006627     Document Type: Article

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